two step cleaning by rinsing in solvents, followed by thermal anneal

rinse in deioniesed water for one minute after cleaning is finished;
dry sample with nitrogene brush at moderate pressure and flow;

for chamber conditioning apply recipe for 5 minutes without sample;
sample fixed with one drop of fombline onto a 6"-wafer as carrier;
bevore locking out sample, allow to pump at chamber base pressure for 5 minutes;
rinse sample in deionised water for 5 minutes after locking out followed by drying with nitrogen brush;
always use special chamber cleaning procedures afterwards;

according to etch time, maceration needs to be prolongated, e.g.: 2-4 hours per 1 minute exposition;
use oxygene plasma icinerator afterwards if necessary;

dry sample with nitrogene brush at moderate pressure and flow;

for chamber conditioning apply recipe for 5 minutes without sample;
sample fixed with one drop of fombline onto a 6"-wafer as carrier;
bevore locking out sample, allow to pump at chamber base pressure for 5 minutes;
rinse sample in deionised water for 5 minutes after locking out followed by drying with nitrogen brush;
always use special chamber cleaning procedures afterwards;

according to etch time, maceration needs to be prolongated, e.g.: 2-4 hours per 1 minute exposition;
use oxygene plasma icinerator afterwards if necessary;

The cleaning is a multi-steps process which foresees
1) immersion of the material into warm (<55°C) acetone (10')
2) immersion of the material into warm methanol (<55°C - 2-5')
3) rinsing with D-I water and flushing with pressurised filtered Ar
4) immersion of the material into warm (70°C) RCA1 solution (15')
5) rinsing with D-I water and dryin by flushing with pressurised filtered Ar

Material is loaded into the PVD chamber nad located in the sample holder. The chamber is, hence, evacuated, down to a base pressure of 10-6 mbar. Ar is hence inserted into the chamber till an operative pressure in the range of 10-3 mbar. Chamber is heated to the desired process temperature (tested 300 and 500 °C). The PVD process is hence started.

check with microscope if surface are clean!
if not:clean the surface with ethanol wetted lens tissue, repeat the ethanol cleaning step before doing the DI water step.

After cleaning and etching the thermal treatment was done at 950C in O2 flow.

Used it for +ve process.

Samples are patterned as described in detail 'Patterning of LAO/STO interface'

AlOx blanket was deposited on the patterned Hall Bar structures. The liftoff was done by Acetone for 5 min and also with Isopropanol.

The process is not fully reliable for field effect device. Still need to improve the parameters.

Helps improve heating of Si

Removal of native oxide

Reactive sputtering of Ti target

Ti target is burned off for 5m every 10m of sputtering to prevent excessive poisoning of target

STO substrate is first washed in deionized water for 30min then annealed

typically 20 nm thick LSMO

sample quenched to RT after deposition

Complete cleaning procedure: ultrasonic bath followed by substrate mounting on sample holder and RF Plasma cleaning inside PPD System

cleaning procedure: ultrasonic, followed by substrate mounting on sample holder and RF Plasma cleaning inside PPD System

Cleaning Procedure: ultrasonic, followed by substrate mounting on sample holder and RF Plasma cleaning inside PPD System

The cleaning is a multi-steps process which foresees
1) immersion of the material into warm (<55°C) acetone (10')
2) immersion of the material into warm methanol (<55°C - 2-5')
3) rinsing with D-I water and flushing with pressurised filtered Ar
4) immersion of the material into warm (70°C) RCA1 solution (15')
5) rinsing with D-I water and dryin by flushing with pressurised filtered Ar

Material is loaded into the PVD chamber nad located in the sample holder. The chamber is, hence, evacuated, down to a base pressure of 10-6 mbar. Ar is hence inserted into the chamber till an operative pressure in the range of 10-3 mbar. Chamber is heated to the desired process temperature (tested RT, 300 and 500 °C). The PVD process is hence started.

The cleaning is a multi-steps process which foresees
1) immersion of the material into warm (<55°C) acetone (10')
2) immersion of the material into warm methanol (<55°C - 2-5')
3) rinsing with D-I water and flushing with pressurised filtered Ar
4) immersion of the material into warm (70°C) RCA1 solution (15')
5) rinsing with D-I water and dryin by flushing with pressurised filtered Ar

Material is loaded into the PVD chamber nad located in the sample holder. The chamber is, hence, evacuated, down to a base pressure of 10-6 mbar. Ar is hence inserted into the chamber till an operative pressure in the range of 10-3 mbar. Chamber is heated to the desired process temperature (tested RT, 300, 500 and 600 °C). The PVD process is hence started

for chamber conditioning apply recipe for 5 minutes without sample;
sample fixed with one drop of fombline onto a 6"-wafer as carrier;
bevore locking out sample, allow to pump at chamber base pressure for 5 minutes;
rinse sample in deionised water for 5 minutes after locking out followed by drying with nitrogen brush;
always use special chamber cleaning procedures afterwards;

MAD technique uses aersols of solutions of metalorganic precusrors, sprayed by a spraying gas onto the heated substrate, where a heterogeneous pyrolisis reaction takes place and the oxide film grows.

etching was done in steps of 2 min

The cleaning is a multi-steps process which foresees
1) immersion of the material into warm (<55°C) acetone (10')
2) immersion of the material into warm methanol (<55°C - 2-5')
3) rinsing with D-I water and flushing with pressurised filtered Ar
4) immersion of the material into warm (70°C) RCA1 solution (15')
5) rinsing with D-I water and flushing with pressurised filtered Ar
6) immersion of the material into RT HF (1')
7) rinsing with D-I water and dryin by flushing with pressurised filtered Ar

The cleaning is a multi-steps process which foresees
1) immersion of the material into warm (<55°C) acetone (10')
2) immersion of the material into warm methanol (<55°C - 2-5')
3) rinsing with D-I water and flushing with pressurised filtered Ar
4) immersion of the material into warm (70°C) RCA1 solution (15')
5) rinsing with D-I water and flushing with pressurised filtered Ar
6) immersion of the material into RT HF (1')
7) rinsing with D-I water and dryin by flushing with pressurised filtered Ar

The cleaning is a multi-steps process which foresees
1) immersion of the material into warm (<55°C) acetone (10')
2) immersion of the material into warm methanol (<55°C - 2-5')
3) rinsing with D-I water and flushing with pressurised filtered Ar
4) immersion of the material into warm (70°C) RCA1 solution (15')
5) rinsing with D-I water and flushing with pressurised filtered Ar
6) immersion of the material into RT HF (1')
7) rinsing with D-I water and dryin by flushing with pressurised filtered Ar

Material is loaded into the PVD chamber nad located in the sample holder. The chamber is, hence, evacuated, down to a base pressure of 10-6 mbar. Ar is hence inserted into the chamber till an operative pressure in the range of 10-3 mbar. Chamber is heated to the desired process temperature (500 °C). The PVD process is hence started.

no filter, mask: layer 1

both evaporations in situ

rinsing in di-water and drying with nitrogene-brush at moderate flow

checking results of previous processes and storing of images

beam neutralisation used, process controlled by quadrupole mass spectrometry (process stopped after Ru vanished)

etch rates of combined recipe:
NFO (19+/-2) nm per minute
BTO (10+/-3) nm per minute
LSMO (7+/-1) nm per minute
Bias Voltage -460 V
allow vacuum to drop until 10e-6 mTorr before locking out sample
rinse sample immediately in di-water
dry with nitrogene brush

mask layer 3; no filter

checking results of previous processes and storing of images

no filter, mask layer 4

checking results of previous processes and storing of images

no filter, mask: layer 1

both evaporations in situ

rinsing in di-water and drying with nitrogene-brush at moderate flow

etch rates of combined recipe:
NFO (19+/-2) nm per minute
BTO (10+/-3) nm per minute
LSMO (7+/-1) nm per minute
Bias Voltage -460 V
allow vacuum to drop until 10e-6 mTorr before locking out sample
rinse sample immediately in di-water
dry with nitrogene brush

Structure:TMR_MASKE1_JK-FINAL/MaskFinal_mirrored_reduced/3; PositionList:2829_L2; Type:LiftOff; Modus:Meander;LongitMode
WF:100 [980x]µm; 30kV;239pA;Ap:30µm;FD:10.007 (corrected)mm
Align:0.97166,0.95349,-0.009,0.015,-0.175,-0.321 Factor:1.003,1.003
AreaDose:200µC/cm² [0.008x0.013]µm²;
Bake:10m@105°C
30kV;AP30;S:-7.2,1.1;A:7.0,1.0

no filter, TMR Mask layer 4

checking results of previous processes and storing of images

no filter, mask: layer 1

beam neutralisation used, process controlled by quadrupole mass spectrometry (process stopped after Ru vanished)

Special comments:

etch rates of combined recipe:
NFO (19+/-2) nm per minute
BTO (10+/-3) nm per minute
LSMO (7+/-1) nm per minute
Bias Voltage -460 V
allow vacuum to drop until 10e-6 mTorr before locking out sample
rinse sample immediately in di-water
dry with nitrogene brush

Structure:TMR_Maske1_JK-Final.csf/MaskFinal_mirrored_2832b/3; PositionList:2832a_L2; Modus:Meander;LongitMode
WF:100 [980x]µm; 30kV;248pA;Ap:30µm;FD:10.025 (corrected)mm
Align:0.97080,0.95259,-0.002,0.014,0.410,0.285 Factor:1.003,1.003
AreaDose:200µC/cm² [0.008x0.013]µm²;

30kV;AP30;S:-7.3,0.9;A:7.0,1.0

post exposure bake: 10 minutes@105°C
flood exposure: 30 seconds
developing AR-U 300-26 1:2 H2O: 60 seconds

Mask: TMR Layer 4, no filter