Interfacing Oxides



Hauser, C.; Richter, T.; Homonnay, N.; Eisenschmidt, C.; Qaid, M.; Deniz, H.; Hesse; D.; Sawicki, M.; Ebbinghaus, S. G.; Schmidt, G.
Yttrium iron garnet thin films with very low damping obtained by recrystallization of amorphous material
Scientific Reports 6 (2016), 20827

We have investigated recrystallization of amorphous Yttrium Iron Garnet (YIG) by annealing in oxygen atmosphere. Our findings show that well below the melting temperature the material transforms into a fully epitaxial layer with exceptional quality, both structural and magnetic. In ferromagnetic resonance (FMR) ultra low damping and extremely narrow linewidth can be observed. For a 56 nm thick layer a damping constant of α = (6.15  1.50)  10−5 is found and the linewidth at 9.6 GHz is as small as 1.30  0.05 Oe which are the lowest values for PLD grown thin films reported so far. Even for a 20 nm thick layer a damping constant of α = (7.35  1.40)  10−5 is found which is the lowest value for ultrathin films published so far. The FMR linewidth in this case is 3.49  0.10 Oe at 9.6 GHz. Our results not only present a method of depositing thin film YIG of unprecedented quality but also open up new options for the fabrication of thin film complex oxides or even other crystalline materials.


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