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Interfacing Oxides

(IFOX)

     
 
Publications::

Shao, Q.; Ku, P.S.; Wang, X.L.; Cheng, W.F.; Zapien, J.A.; Leung, C.W.; Borgatti, F.; Gambardella, A.; Dediu, V.; Ciprian, R.; Ruotolo A.
Chemical states and ferromagnetism in heavily Mn-substituted Zinc Oxide thin films
submitted to the Journal of Applied Physics (2014),

A concentration of Manganese as high as 8% was successfully diluted into Zinc Oxide epitaxial films deposited by pulsed laser deposition. The films showed strong ferromagnetism with a large coercivity. Low temperature X-ray absorption spectroscopy (XAS) measurements showed that all the Manganese ions substitute for Zinc sites of the wurtzite lattice in the valence +2. Photoluminescence measurements excluded the presence of Zinc vacancies, as well as Zn interstitials. All the magnetic moment measured was to ascribe to the formation of bound magnetic polarons, with no other contribution due to Manganese-secondary phases or Zinc vacancy-mediated double exchange interaction.

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