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Publications::
Boni, G. A.; Pintilie, I.; Pintilie, L.; Preziosi, D.; Hakan, D.; Alexe, M. Electronic transport in (La,Sr)MnO3-ferroelectric-(La,Sr)MnO3 epitaxial structures Journal of Applied Physics 113 (2013), 224103 The leakage current in all oxide epitaxial (La,Sr)MnO3-ferroelectric-(La,Sr)MnO3 structures,
where the ferroelectric layer is either BaTiO3 or Pb(Zr0.2Ti0.8)O3, was analyzed on a broad range of
temperatures and for different thicknesses of the ferroelectric layer. It was found that, although the
structures are nominally symmetric, the current-voltage (I–V) characteristics are asymmetric. The
leakage current depends strongly on the thicknesses of the ferroelectric layer, on temperature and
on the polarity of the applied voltage. Simple conduction mechanisms such as space charge limited
currents or thermionic emission cannot explain in the same time the voltage, temperature, and
thickness dependence of the experimentally measured leakage currents. A combination between
interface limited charge injection and bulk controlled drift-diffusion (through hopping in the case
of BTO and through band mobility in the case of PZT) is qualitatively explaining the experimental
I–V characteristics. View/Download |
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